roboticsMONOist Japan· 6/4/2026, 9:45:00 PM9.0

三菱電機が第5世代SiC-MOSFETを開発、オン抵抗を25%削減し業界トップクラスに

OHd@ªæ5¢ãɽéSiC-MOSFETðJBVJÌÆ©g`\¢ÈÇÉæèA]i©ç25í¸µ½uÆEgbvNXvi¯ÐjÌáIïRðÀ»µ½Æ¢¤B @OHd@Í2026N64úAæ5¢ãɽéSiCiVRJ[oChj-MOSFETðJµ½Æ\µ½BVJÌÆ©g`\¢ÈÇÉæèA]i©ç25í¸µ½uÆEgbvNXvi¯ÐjÌáIïRðÀ»µ½Æ¢¤BEVidC©®ÔjâPHEVivOCnCubhÔjAHEVinCubhÔjÈÇd®ÔixEVjÌCo[^[âeAxleü¯ÉA¯º{©çTvñðJn·éB @æ5¢ãSiC-MOSFETÅÍAâðg`àÉßÞuFSCiFlat Source Contactj\¢vðV½ÉJµ½Bæ4¢ãÅàKpµÄ¢éÎßûü©çÌCIüZpÆÌgÝí¹ÉæèA]Ìg`^\¢æèàZ§xðßÄd¬ð¬êâ··é±ÆÅÆEgbvNXÌáIïRðÀ»µ½B±êÉæÁÄAÔÚobe[ÌÚeÊɧÀª éxEVÌs£ÌLâdïÌüPÉÂȰçêéB @èid³1200VÌuWF0007Q-1200AAvÌIïRÍ6.8m¶A¯750VÌuWF0005Q-0750AAvÌIïRÍ4.7m¶B±êÍAæ4¢ãSiC-MOSFET̯êèid³iƵ«¢ld³ð»ë¦½ãÅIïRðärµ½êAñ25ḵ½lÉÈÁĢ鯢¤B @ܽAXCb`ItÉMOSFETÉà ³ê½_CI[hª©®IÉd¬Ì¦°¹ÆÈéu{fB[_CI[hÊdvÉNö·é«\ò»ð}§·é±ÆÅAi¿ÌÀè«ðüãµ½B±êÜÅJµÄ«½v[i[^âg`^ÌSiC-MOSFETASiC-SBDiVbgL[oA_CI[hjÉÖ·é20NÈã̤^»¢ÀÑÅ|Á½ASiCÆ©ÌHöÇâÆ©ÌQ[g_»»@ÈÇÌ»¢vZXZpðpµÄAXCb`OÌI^It®ìÉæÁĶ·éd͹¸âIïRÈÇÌÏ®à}§µÄ¢éB±êçÉæÁÄA·úÔÌgpÅàÀèµ½i¿ðÀ»µAxEVpCo[^[âeAxleÌÏv«ðmÛ·é±ÆÅAxEVÌ«\ÛÉv£Å«éƵĢéB Copyright © ITmedia, Inc. All Rights Reserved. gÝÝJÌLLO

💡 AI analysis: Mitsubishi Electric's breakthrough in 5th-generation SiC-MOSFET technology reduces bonding resistance by 25%, establishing industry-leading efficiency that could position the company as a key player in the next-generation power electronics market, driving innovation in EVs and industrial automation.
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